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Focus on silicon-based semiconductors—a real-world, market-dominating issue that will appeal to people looking to apply what they are learning. Comprehensive coverage includes treatment of basic semiconductor properties, elements of Quantum Mechanics, energy band theory, equilibrium carrier statistics, recombination-generation processes, and drift/diffusion carrier transport. Practicing engineers and scientists will find this volume helpful, whether it be self-study, reference, or review.
Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, the first of its kind on topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described.
Editors: Park, Nam-Gyu, Grätzel, Michael, Miyasaka, Tsutomu (Eds.)Written by the pioneers in the fieldCovers the emerging photovoltaic technology of perovskites solar cellsA complete review on organometal halide perovskitesThis book covers fundamentals of organometal perovskite materials and their photovoltaics, including materials preparation and device fabrications. Special emphasis is given to halide perovskites. The opto-electronic properties of perovskite materials and recent progress in perovskite solar cells are described.
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors.
The chips in present-day cell phones already contain billions of sub-100-nanometer transistors. By 2020, however, we will see systems-on-chips with trillions of 10-nanometer transistors. But this will be the end of the miniaturization, because yet smaller transistors, containing just a few control atoms, are subject to statistical fluctuations and thus no longer useful. We also need to worry about a potential energy crisis, because in less than five years from now, with current chip technology, the internet alone would consume the total global electrical power!This book presents a new, sustainable roadmap towards ultra-low-energy (femto-Joule), high-performance electronics.
Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up–to–date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline′s literature.
Because of their high noise immunity and low static power supply drain, complementary metal-oxide-semiconductor (CMOS) devices produce less heat than other forms of logic and allow a high density of logic functions on a chip. These beneficial characteristics have fueled the use of CMOS image sensors in consumer electronics, robot vision, biotechnology, and medicine. With the introduction of smart functions in CMOS image sensors, even more versatile applications are now possible. Exploring this popular technology, Smart CMOS Image Sensors and Applications focuses on the smart functions implemented in CMOS image sensors as well as the applications of these sensors.
The latest techniques for designing state-of-the-artpower supplies, including resonant (LLC) converters
Extensively revised throughout, Switching Power Supply Design & Optimization, Second Edition, explains how to design reliable, high-performance switching power supplies for today’s cutting-edge electronics. The book covers modern topologies and converters and features newinformation on designing or selecting bandgap references, transformer design using detailed new design charts for proximity effects, Buck efficiency loss teardown diagrams, active reset techniques, topology morphology, and a meticulous AC-DC front-end design procedure.
This updated resource contains design charts and numerical examples for comprehensive feedback loop design, including TL431, plus the world’s first top-down simplified design methodology for wide-input resonant (LLC) converters. A step-by-step comparative designprocedure for Forward and Flyback converters is also included in this practical guide.
This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators.The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk–boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe).
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology.
Topological Insulators (TIs) are insulators in the bulk, but have exotic metallic states at their surfaces. The topology, associated with the electronic wavefunctions of these systems, changes when passing from the bulk to the surface.This work studies, by means of infrared spectroscopy, the low energy optical conductivity of Bismuth based TIs in order to identify the extrinsic charge contribution of the bulk and to separate it from the intrinsic contribution of the surface state carriers. The extensive results presented in this thesis definitely shows the 2D character of the carriers in Bismuth-based topological insulators.
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics.
Brilliant LED Projects presents 20 hands-on, step-by-step projects for you to make using inexpensive, commonly available components. Projects range from simple, functional devices, such as a “green” LED flashlight and a flashing rear bike light, to more complex designs, including color-changing disco lights and persistence-of-vision (POV) gadgets–all featuring easy-to-follow instructions, highlighted with detailed illustrations.
Build with confidence using this book’s expert guidance and practical information, including overviews of various LED components, comprehensive listings of tool and supplies, sample clock and driver circuit building blocks, and more.
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided.
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